Achievements

Select MemoCIS Achievements


1. Researchers from the Czech Republic, Switzerland, Germany, Italy, Cyprus, Spain and the UK, bring together four distinct scientific communities to work together on the common vision of creating Memristor based systems, by pooling together skills from material science, semiconductor devices, circuit theory, device modeling and simulation, sensor design, and circuit and system design.


2. German Action partners demonstrates BiFeO3 memristor-based encryption of medical data 


3. UK and Swiss partners from the MemoCIS Action emulate short-term synaptic devices with memristive devices.


4. UK and Swiss partners from the MemoCIS Action implement a spike-timing based learning rule using TiO2-x memristors


5. Italian and UK partners demonstrate gradual set dynamics in HFO2 Memristors 


6. German based partners demonstrate the use of tunnel junction based memristors as artificial synapses 


7. Italian and UK partners demonstrate HFO2 based Memristors are suitable for neuromorphic applications 


8. Italian partners demonstrate neuromorphic learning and recognition with one-transistor-one resistor synapse 


9. Italian partners demonstrate unsupervised learning by spike timing dependent plasticity in phase change memory (PCM) synapses 


10. Italian partners demonstrate physical unbiased generation of random numbers with coupled resistive switching devices 


11. German and US partners develop Robust simulation of a TaO memristor model 


12. Italian partners investigated the role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices and showed that both metal oxide interfaces are active in the formation/dissolution of conductive filaments 


13. UK partners develop the first instrument to enable en-masse RRAM characterisation with ns pulsing resolution 


14. UK partners develop a memristor biasing parameter optimizer that can also be used for increasing device reliability


15. UK partners implement a spike-based perceptron learning rule using TiO2−x memristors 


16. UK partners develop a conductive AFM investigation methodology for determining switching thresholds in titanium dioxide thin films to give new insights for device programmability, reliability and failure mechanisms 


17. UK and China partners develop a memristor SPICE model accounting for synaptic activity dependence 


18. UK partners perform X-ray absorption spectroscopy (XAS) to characterize the atomic-scale structures of a nonstoichiometric TiO2−x thin films 


19. UK and Swiss partners demonstrate emulation of short-term synaptic dynamics with memristive devices 


20. Swiss partners develop the worlds first electrochemical biosensor base of the memristive effect and DNA aptamers, for the detection of prostate specific antigens for early detection of cancer 


21. UK partners emulate the electrical activity of the neuron using a silicon oxide RRAM cell 


22. UK and Dutch partners investigation the Switching Mechanism in TiO2 Based RRAM by using a two-dimensional EDX approach to show that the switching mechanism involves both the redistribution of both Ti and O ions within the active layer 


23. UK and Austrian partners demonstrate unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses, showcasing successful learning in the presence of corrupted input data and probabilistic neurons 


24. German and Czech partners investigate convergence and numerical issues related to accurate memristor modeling 


25. German and Czech partners develop a generalized rule of homothety of ideal memristors and their siblings 


26. German and Italian partners develop a Generalized Boundary Condition Model for memristors 


27. German and Italian partners develop a class of memristor circuits consisting of a cascade connection between a static nonlinear two-port and a dynamic one port 


28. German partners get insights on underlying mechanisms of NbOx memristors through application of theory of nonlinear dynamics 


29. Greek partners (industrial and academia) demonstrate memristor-based architecture for High-Radix arithmetic systems 


30. German partners (industrial and academia) develop a physics-based Spice model for the Nb2O5 memristor 


31. Italian and UK partners demonstrate HfO2-based Memristors are suitable for Neuromorphic Applications 


32. Czech partners develop a behavioral model for simplified identification of memristor parameters 


33. Czech partners develop an improved models of the TiO2 memristor 


34. Serbian partners design memristor based circuits for microwave applications 


35. German and USA partners discover memory loss in memristors and develop models 


36. Greek and Italian partners develop a two transistor non-ideal memristor emulator 


37. Spanish and Greek partners develop the experimental model of a non-ideal memristor

 

38. Dutch, Belgium and Swiss (IBM Research Laboratory) partners demonstrate memristor-based, computation-in-memory architecture for Data-Intensive Applications. 


39. Greek partners develop multi-state memristive nanocrossbar for high-radix computer arithmetic systems 


40. UK and Swiss partners demonstrate emulation of short-term synaptic dynamics with memristive devices


41. Swiss and UK partners implement a spike-based perceptron learning rule using TiO2−x memristors. 


42. Portuguese partners explore Memristor-based Willshaw network and analyze capacity and robustness to noise in the presence of defects, thus exploring Memristor reliability from an architectural point of view 


43. Greek and Dutch partners explore five alternative architectures towards developing reliable memristive crossbar memories 


44. Italian and German partners identify a class of versatile circuits, made up of standard electrical components, to be memristors 


45. Norwegian and Swiss partners develop a novel readout circuit for memristive biosensors

 

46. Spanish and Greek partners develop an analytical energy model for the reset transition in unipolar resistive-switching RAMs 


47. Czech partners develop an analog emulator of genuinely floating memcapacitor 


48. Czech partners develop memristor models for SPICE simulation of extremely large memristive networks 


49. Czech partners identify “The Simplest Memristor in the World,”


50. Italian partners develop a novel Flux—Charge Analysis Method for memristors 


51. Italian and German partners write/edit a book on “Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications”, with (but not limited to) contributions from MemoCIS Action members

 

52. UK partner develops Gradient-descent-based learning in memristive crossbar arrays 


53. Italian and German partners investigate “Synchronization conditions in simple memristor neural networks 


54. Dutch partners develop Computation-in-memory based parallel adder 


55. US and Spanish partners model and demonstrate a Hopfield Network Analog-to-Digital Converter with Hybrid CMOS/Memristor Circuits 


56. Spanish and US partners develop a generalized reconfigurable memristive dynamical system for neuromorphic applications 


57. Swiss partners develop SiNW-FET in-Air Biosensors for High Sensitive and Specific Detection in Breast Tumor Extract 


58. Greek partners develop Oscillation-Based Slime Mould Electronic Circuit Model for Maze-Solving Computations 


59. Swiss partners develop Event-based softcore processor in a biohybrid setup applied to structural plasticity 


60. Swiss partners examine resistance impact by long connections on electrical behavior of integrated Memristive Biosensor